Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors

Han Yin Liu, Yi Hsuan Wang, Wei-Chou Hsu

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

This paper proposes the H2O2 oxidation technique to grow Al2O3 as the surface passivation layer of the metal-semiconductor-metal ultraviolet (UV) photodetector (PD). The dark current of the H2O2-grown-Al2O3-passivated PD was reduced from 104 to 4.43 nA. The surface leakage of the PD was reduced from 65.7 nA/ 1.67~\mu \text{A} to 0.46 nA/0.5 nA in the dark/under illumination. It was found that \sim 35 % photocurrent results from the surface leakage. The surface leakages in the H2O2-grown-Al2O3 passivated and the plasma-enhanced chemical vapor deposition (PECVD)-grown-SiO2 passivated PDs were reduced significantly. Although the photocurrent and the photoresponsivity of the oxide-passivated PDs were lower than those of the unpassivated one, the dark current, UV-to-visible rejection ratio, noise equivalent power, and the detectivity of the oxide-passivated PDs were better than those of the unpassivated one. In addition, the performances of the H2O2-grown-Al2O3 passivated PD were better than those of the PECVD-grown-SiO2 passivated one.

原文English
文章編號7115014
頁(從 - 到)5202-5207
頁數6
期刊IEEE Sensors Journal
15
發行號9
DOIs
出版狀態Published - 2015 九月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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