Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

C. K. Wang, Y. W. Wang, Y. Z. Chiou, S. H. Chang, J. S. Jheng, S. P. Chang, S. J. Chang

研究成果: Article

摘要

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

原文English
頁(從 - 到)585-589
頁數5
期刊Journal of Crystal Growth
468
DOIs
出版狀態Published - 2017 六月 15

指紋

ultraviolet radiation
Light emitting diodes
insertion
light emitting diodes
retarding
Electrons
Semiconductor devices
Conduction bands
Quantum efficiency
Band structure
electrons
Optical properties
Chemical analysis
semiconductor devices
energy bands
quantum efficiency
discontinuity
conduction bands
Ultraviolet Rays
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

引用此文

@article{c7124518f69a434dbb2cb738c8828e46,
title = "Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses",
abstract = "In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.",
author = "Wang, {C. K.} and Wang, {Y. W.} and Chiou, {Y. Z.} and Chang, {S. H.} and Jheng, {J. S.} and Chang, {S. P.} and Chang, {S. J.}",
year = "2017",
month = "6",
day = "15",
doi = "10.1016/j.jcrysgro.2016.12.016",
language = "English",
volume = "468",
pages = "585--589",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses. / Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

於: Journal of Crystal Growth, 卷 468, 15.06.2017, p. 585-589.

研究成果: Article

TY - JOUR

T1 - Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

AU - Wang, C. K.

AU - Wang, Y. W.

AU - Chiou, Y. Z.

AU - Chang, S. H.

AU - Jheng, J. S.

AU - Chang, S. P.

AU - Chang, S. J.

PY - 2017/6/15

Y1 - 2017/6/15

N2 - In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

AB - In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

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U2 - 10.1016/j.jcrysgro.2016.12.016

DO - 10.1016/j.jcrysgro.2016.12.016

M3 - Article

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VL - 468

SP - 585

EP - 589

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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