Suppression of the burn-in effect in InGaP/GaAs heterojunction bipolar transistors by constant period of voltage stress

Kwok Keung Chong, Hsun Chin Chen, Mau-phon Houng, Yeong-Her Wang, Shi Ting Lin

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

Two different locations showing an abrupt increase of dc current gain at the opposite extreme of base-emitter voltages were found in InGaP/GaAs heterojunction bipolar transistors. Conversely, a relatively slight increase of current gain obtained in the range of base-emitter voltage forms a transition bridge between them. By inspecting the results of base current and current gain transients, an abrupt increase of current gain associated with a decrease of base current directly corresponds to the second abrupt increase of current gain.

原文English
頁(從 - 到)2079-2083
頁數5
期刊Journal of Applied Physics
95
發行號4
DOIs
出版狀態Published - 2004 二月 15

    指紋

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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