Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy

Yow Jon Lin, Ching Ting Lee

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

The surface analysis of (NH4)2Sx treated indium gallium nitride (InGaN) was presented using x-ray photoelectron spectroscopy. The epitaxial layers were grown on c-plane sapphire substrates using a metal-organic chemical vapor deposition (MOCVD) system. A peak with a binding energy of 532.7 eV was observed on the cleaned InGaN surface. The evidences for the formation of GaSx and InSy surface passivation species on the InGaN surface were also found.

原文English
頁(從 - 到)1734-1738
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
發行號5
DOIs
出版狀態Published - 2001 九月 1

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

指紋

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