Surface analysis of (NH₄)₂S_x-treated InGaN using x-ray photoelectron spectroscopy

Engineering & Materials Science

• Binding energy 31%
• Chemical vapor deposition 22%
• Epitaxial films 29%
• Gallium nitride 80%
• Metals 12%
• Organic chemicals 30%
• Passivation 23%
• Photoelectron spectroscopy 100%
• Sapphire 26%
• Substrates 13%
• Surface analysis 75%
• X rays 53%

Physics & Astronomy

• binding energy 12%
• gallium nitrides 68%
• indium 55%
• metalorganic chemical vapor deposition 13%
• passivity 13%
• photoelectron spectroscopy 48%
• sapphire 12%
• x ray spectroscopy 59%