Surface characterization of homoepitaxial β-FeSi2 film on β-FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy

F. Esaka, H. Yamamoto, H. Udono, N. Matsubayashi, K. Yamaguchi, S. Shamoto, M. Magara, T. Kimura

研究成果: Article同行評審

摘要

Surface characterization of a homoepitaxial β-FeSi2 film grown on a β-FeSi2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β-FeSi2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality.

原文English
頁(從 - 到)150-153
頁數4
期刊Physics Procedia
11
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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