Surface modification of ZnO film by hydrogen peroxide solution

Chia Hung Tsai, Wei Chin Wang, Feng Lin Jenq, Chien Chih Liu, Chen I. Hung, Mau Phon Houng

研究成果: Article同行評審

36 引文 斯高帕斯(Scopus)

摘要

The effect of hydrogen peroxide (H2O2) treatment on the microstructure and luminescent properties of ZnO thin films has been investigated. Governed by high-resolution transmission electron microscopy and selected-area electron diffraction patterns, the oxygen radicals dissociated from H2O2 solution at room temperature and substantially changed the polycrystalline ZnO film into an insulator. In addition, the photoluminescence spectra showed that H2O2 solution had nearly no effect on the intensity of ultraviolet emission, whereas it significantly enhanced the intensity of deep-level emission. These observations strongly reveal the fact that the oxygen radicals penetrating into a ZnO film are reasonably speculated to occupy the interstitial sites to form oxygen interstitials Oi or fill the Zn vacancies to form antisite oxygen OZn defects. Because of these extra defects involved, an enhancement of the green light luminescence is significantly promoted in our ZnO samples after handling with H2O2 solution. Based on the characteristics mentioned above, our hydrogen peroxide solution treated ZnO film has the potential for applying to the light-emitting diode with metal-insulator-semiconductor structure.

原文English
文章編號053521
期刊Journal of Applied Physics
104
發行號5
DOIs
出版狀態Published - 2008 九月 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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