Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

To improve the performance of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we directly grew an oxide passivation layer in regions between the interdigitated electrodes of MSM-PDs. using the photoelectrochemical oxidation method. The measured dark current of passivated MSM-PDs was comparatively lower than that of unpassivated devices for all of the applied voltages. The breakdown voltages of MSM-PDs with and without oxide passivation layer were 52.5 and 42.5 V, respectively. The benefits of incorporating the oxide passivation layer will possibly lead to a sizable reduction of surface states that in return will help to decrease the probability of surface breakdown. Also, it should improve the rejection ratio of MSM-PDs.

原文English
頁(從 - 到)462-464
頁數3
期刊IEEE Photonics Technology Letters
17
發行號2
DOIs
出版狀態Published - 2005 2月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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