Surface properties of film deposition using molecular dynamics simulation

Ching Jiung Chu, Tei Chen Chen

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

The morphology of growing film by the sputtering process is studied with molecular dynamics (MD) simulation. We focus on the roughness and layer coverage for diverse deposition process parameters including substrate temperature, deposition rate, incident energy and incident angle. This paper presents the effect of different substrate sizes. The results of simulation show smaller roughness and better layer coverage at low substrate temperature of 500 K and high incident energy of 10-15 eV. The film-substrate system becomes rapidly stabilized at the end of deposition. Our simulation shows that thin films can also grow with two-dimensional layer-by-layer-like way for larger size of substrate at room temperature. These simulated results are consistent with both earlier MD simulations and experimental observation.

原文English
頁(從 - 到)1796-1804
頁數9
期刊Surface and Coatings Technology
201
發行號3-4
DOIs
出版狀態Published - 2006 十月 5

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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