Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation

Jian V. Li; Shun Lien Chuang; Edward Aifer; Eric M. Jackson

doi:10.1063/1.2743905

Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation

Jian V. Li, Shun Lien Chuang, Edward Aifer, Eric M. Jackson

航空太空工程學系

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

The surface recombination velocity (SRV) of minority electrons in a type-II InAsGaSb superlattice photodiode is quantitatively investigated using the electron beam induced current technique and its value used to evaluate the effects of two different passivation methods. Before passivation, the SRV was determined to be (5.0±0.2) × 104 cms. The SRVs of two samples passivated at room temperature are compared with that of the unpassivated sample. One passivation method, using a neutralized (N H4) 2 S solution for 60 min, reduces the SRV by a factor of 2. The other passivation method, using 4% (N H4) 2 S solution for 30 min, reduces the SRV by more than one order of magnitude.

原文	English
文章編號	223503
期刊	Applied Physics Letters
卷	90
發行號	22
DOIs	https://doi.org/10.1063/1.2743905
出版狀態	Published - 2007

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.2743905

其它文件與鏈接

引用此

@article{9170e1b163724c57b3fe742beb4150c9,

title = "Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation",

abstract = "The surface recombination velocity (SRV) of minority electrons in a type-II InAsGaSb superlattice photodiode is quantitatively investigated using the electron beam induced current technique and its value used to evaluate the effects of two different passivation methods. Before passivation, the SRV was determined to be (5.0±0.2) × 104 cms. The SRVs of two samples passivated at room temperature are compared with that of the unpassivated sample. One passivation method, using a neutralized (N H4) 2 S solution for 60 min, reduces the SRV by a factor of 2. The other passivation method, using 4% (N H4) 2 S solution for 30 min, reduces the SRV by more than one order of magnitude.",

author = "Li, {Jian V.} and Chuang, {Shun Lien} and Edward Aifer and Jackson, {Eric M.}",

note = "Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. The EBIC measurement was carried out in the Center for Microanalysis of Materials, University of Illinois, which was partially supported by the U. S. Department of Energy under Grant No. DEFG02-91-ER45439.",

year = "2007",

doi = "10.1063/1.2743905",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "22",

}

TY - JOUR

T1 - Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation

AU - Li, Jian V.

AU - Chuang, Shun Lien

AU - Aifer, Edward

AU - Jackson, Eric M.

N1 - Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. The EBIC measurement was carried out in the Center for Microanalysis of Materials, University of Illinois, which was partially supported by the U. S. Department of Energy under Grant No. DEFG02-91-ER45439.

PY - 2007

Y1 - 2007

N2 - The surface recombination velocity (SRV) of minority electrons in a type-II InAsGaSb superlattice photodiode is quantitatively investigated using the electron beam induced current technique and its value used to evaluate the effects of two different passivation methods. Before passivation, the SRV was determined to be (5.0±0.2) × 104 cms. The SRVs of two samples passivated at room temperature are compared with that of the unpassivated sample. One passivation method, using a neutralized (N H4) 2 S solution for 60 min, reduces the SRV by a factor of 2. The other passivation method, using 4% (N H4) 2 S solution for 30 min, reduces the SRV by more than one order of magnitude.

AB - The surface recombination velocity (SRV) of minority electrons in a type-II InAsGaSb superlattice photodiode is quantitatively investigated using the electron beam induced current technique and its value used to evaluate the effects of two different passivation methods. Before passivation, the SRV was determined to be (5.0±0.2) × 104 cms. The SRVs of two samples passivated at room temperature are compared with that of the unpassivated sample. One passivation method, using a neutralized (N H4) 2 S solution for 60 min, reduces the SRV by a factor of 2. The other passivation method, using 4% (N H4) 2 S solution for 30 min, reduces the SRV by more than one order of magnitude.

UR - http://www.scopus.com/inward/record.url?scp=34249878713&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249878713&partnerID=8YFLogxK

U2 - 10.1063/1.2743905

DO - 10.1063/1.2743905

M3 - Article

AN - SCOPUS:34249878713

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223503

ER -

Surface recombination velocity reduction in type-II InAsGaSb superlattice photodiodes due to ammonium sulfide passivation

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此