Switch the n-type to ambipolar transfer characteristics by illumination in n-type pentacene-based organic field-effect transistors

Tzung Da Tsai, Chung Yu Huang, Hsuan Ming Lin, Tzung Fang Guo, Ten Chin Wen

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This work investigates the suppression of n-channel and the switch of transfer characteristics (from n-type to ambipolar) by illumination in n-type pentacene-based organic field-effect transistors (OFETs). The illumination outcomes differently on the output characteristics of OFETs, which markedly decreases the magnitude of drain current (n-channel) and shifts the turn-on voltage to a higher positive bias in the n-type regime, but induces the formation of p-channel in the p-type regime. We attribute that the trapped negative charges in the device as induced by illumination electrostatically shield the effective electrical field applied to the gate with source/drain electrodes and modulate the device performance. The result of quasi-static capacitance-voltage measurement agrees well with the modulations of the transfer characteristics for n-type OFETs by illumination. In addition, the de-trapping of charges recovers the n-type only output characteristics of pentacene-based OFETs. This study highlights the unique photo responses of n-type pentacene-based OFETs to the development of phototransistors of distinct output characteristics operated in n- and p-type regime.

原文English
頁(從 - 到)3805-3810
頁數6
期刊Organic Electronics
15
發行號12
DOIs
出版狀態Published - 2014 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 生物材料
  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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