Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

P. Khalili Amiri, Z. M. Zeng, J. Langer, H. Zhao, G. Rowlands, Y. J. Chen, I. N. Krivorotov, J. P. Wang, H. W. Jiang, J. A. Katine, Y. Huai, K. Galatsis, K. L. Wang

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157 引文 斯高帕斯(Scopus)

摘要

We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/ cm2 are obtained at 10 ns write times.

原文English
文章編號112507
期刊Applied Physics Letters
98
發行號11
DOIs
出版狀態Published - 2011 3月 14

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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