Switching transient analysis of a metal/ferroelectric/semiconductor switch diode with high speed response to infrared light

F. Y. Chen, Jyh Jier Ho, Y. K. Fang, C. Y. Shu, Chin Yuan Hsu, Jiann Ruey Chen, M. S. Ju

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A thin PbTiO3-n-p+ silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infrared light power. The diode has a rapid response time of 0.65 μs compared with other conventional infrared sensors. It is attributed to the rapid switching device structure and the smaller pyroelectric layer thickness, 50 nm. In this paper, we have analyzed the rapid switching transient response by using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.

原文English
頁(從 - 到)502-510
頁數9
期刊IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
46
發行號3
DOIs
出版狀態Published - 1999

All Science Journal Classification (ASJC) codes

  • 儀器
  • 聲學與超音波
  • 電氣與電子工程

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