Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor

Ching Kang Shen, Rajneesh Chaurasiya, Kuan Ting Chen, Jen Sue Chen

研究成果: Article同行評審

摘要

Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (ID-VG) analysis. This substantiates superior artificial synapse responses in ferroelectric-coupled ZTO TFT because the current potentiation and depression are individually improved. The ferroelectric-coupled ZTO TFT successfully emulates the essential features of the artificial synapse, including pair-pulsed facilitation (PPF) and potentiation/depression (P/D) characteristics. In addition, the device also mimics the memory consolidation behavior through intensified stimulation. This work demonstrates that the ferroelectric-coupled ZTO synaptic transistor possesses great potential as a hardware candidate for neuromorphic computing.

原文English
頁(從 - 到)16939-16948
頁數10
期刊ACS Applied Materials and Interfaces
14
發行號14
DOIs
出版狀態Published - 2022 4月 13

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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