Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Kai Hsuan Lee, Ping Chuan Chang, Tse Pu Chen, Sheng Po Chang, Hung Wei Shiu, Lo Yueh Chang, Chia Hao Chen, Shoou Jinn Chang

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

原文English
文章編號072104
期刊Applied Physics Letters
102
發行號7
DOIs
出版狀態Published - 2013 2月 18

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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