摘要
Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.
原文 | English |
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文章編號 | 072104 |
期刊 | Applied Physics Letters |
卷 | 102 |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 2013 2月 18 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)