Synthesis and characterization of chalcopyrite quaternary semiconductor Cu (InxGa1-x) S2 nanowires by electrospun route

Lin Jer Chen, Jiunn Der Liao, Yu Ju Chuang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Chalcopyrite Cu(In0.8Ga0.2)S2 (CIGS) nanowires were synthesized by using a relatively simple and convenient electrospun process. From the reactions of CuCl, InCl3, GaCl 3 and thiocarbamide as a precursor, semiconductor CIGS nanowires with diameter in the range of 60-80 nm were obtained for Polyvinylbutyral/CIGS precursor ratios of 40% at an applied voltage of 25 kV after annealing treatment at 600 °C for 3 h. A probable formation mechanism of chalcopyrite quaternary semiconductor nanowires is proposed based on a series of comparative experiments conducted under various reaction conditions.

原文English
頁(從 - 到)3658-3662
頁數5
期刊Thin Solid Films
519
發行號11
DOIs
出版狀態Published - 2011 三月 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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