The hexagonal CuInSe2 thinfilm was synthesized via a low temperature solid state reaction from CuSe and InSe powders. CuSe and InSe phases react and directly transform into CuInSe2 without the occurrence of any intermediate phase and the morphology of the newly formed CuInSe2 crystalline was close to that of the CuSe reactant particle based on the SEM results, which indicated that the solid state reaction kinetics may be dominated by the In3+ ions diffusion. The CuInSe2 thin film were characterized using X-ray powder diffraction (XRD), scanning electron microscopy (SEM), thermogravimetric analysis (TGA), and transmission electron microscopy (TEM). The optical properties of the CuInSe2 thin film were also recorded by UV-vis absorption spectroscopy. The CuInSe 2 thin film prepare from the solid state reaction did not using the selenide process and its band gap was 1.06 eV which demonstrates that it is suitable for use in a thin film solar cell light absorption layer.
|出版狀態||Published - 2014|
|事件||2nd International Conference on Innovation, Communication and Engineering, ICICE 2013 - Qingdao, China|
持續時間: 2013 10月 26 → 2013 11月 1
|Other||2nd International Conference on Innovation, Communication and Engineering, ICICE 2013|
|期間||13-10-26 → 13-11-01|
All Science Journal Classification (ASJC) codes