Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition

Han Ching Chang, Chien Liang Tu, Kuang I. Lin, Jiang Pu, Taishi Takenobu, Chien Nan Hsiao, Chang Hsiao Chen

研究成果: Article同行評審

91 引文 斯高帕斯(Scopus)

摘要

Recently, 2D materials of indium selenide (InSe) layers have attracted much attention from the scientific community due to their high mobility transport and fascinating physical properties. To date, reports on the synthesis of high-quality and scalable InSe atomic films are limited. Here, a synthesis of InSe atomic layers by vapor phase selenization of In2O3 in a chemical vapor deposition (CVD) system, resulting in large-area monolayer flakes or thin films, is reported. The atomic films are continuous and uniform over a large area of 1 × 1 cm2, comprising of primarily InSe monolayers. Spectroscopic and microscopic measurements reveal the highly crystalline nature of the synthesized InSe monolayers. The ion-gel-gated field-effect transistors based on CVD InSe monolayers exhibit n-type channel behaviors, where the field effect electron mobility values can be up to ≈30 cm2 V−1 s−1 along with an on/off current ratio, of >104 at room temperature. In addition, the graphene can serve as a protection layer to prevent the oxidation between InSe and the ambient environment. Meanwhile, the synthesized InSe films can be transferred to arbitrary substrates, enabling the possibility of reassembly of various 2D materials into vertically stacked heterostructures, prompting research efforts to probe its characteristics and applications.

原文English
文章編號1802351
期刊Small
14
發行號39
DOIs
出版狀態Published - 2018 9月 27

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 生物材料
  • 一般化學
  • 一般材料科學

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