TY - JOUR
T1 - Synthesis of multilayered composite nanotube heterostructure; SiC-SiO 2, C-SiO 2, and C-SiC-SiO 2 nanotubes
AU - Taguchi, T.
AU - Shamoto, S.
N1 - Funding Information:
Acknowledgments This study was partly supported by a Grant-in-Aid for Young Scientists (B) (No. 23760646) from the Ministry of Education, Science, Sports and Culture of Japan.
PY - 2012/5
Y1 - 2012/5
N2 - Three types of composite nanotube heterostructures (two double-layered and one triple-layered structure) are synthesized by simple heat treatment, forming SiC-SiO 2, C-SiO 2, and C-SiC-SiO 2 composite coaxial nanotubes. These multilayered composite nanotubes consist of several components with different electrical properties, for example, metal, semiconductor, and insulator components. In particular, C-SiC-SiO 2 triple-layered nanotubes with metallic, semiconducting, and insulating layers are synthesized for the first time. These multilayered nanotubes can be expected to find applications in nanoscale heterostructure electronic and optical devices.
AB - Three types of composite nanotube heterostructures (two double-layered and one triple-layered structure) are synthesized by simple heat treatment, forming SiC-SiO 2, C-SiO 2, and C-SiC-SiO 2 composite coaxial nanotubes. These multilayered composite nanotubes consist of several components with different electrical properties, for example, metal, semiconductor, and insulator components. In particular, C-SiC-SiO 2 triple-layered nanotubes with metallic, semiconducting, and insulating layers are synthesized for the first time. These multilayered nanotubes can be expected to find applications in nanoscale heterostructure electronic and optical devices.
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U2 - 10.1007/s10853-012-6290-9
DO - 10.1007/s10853-012-6290-9
M3 - Review article
AN - SCOPUS:84859106371
SN - 0022-2461
VL - 47
SP - 4363
EP - 4369
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 10
ER -