Synthesis of well aligned silicon nanowire arrays by reflow of photoresist techniques

Chien Wei Liu, Cheng Yung Kuo, Chuan Po Wang, Chie Gau, Shiuan Hua Shiau, Bau Tong Dai

研究成果: Conference contribution

摘要

Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H2, the current work uses N2 as carrier gas. The growth conditions of SiNWs are controlled by the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620°C and P=333 m torr, and the tapering parameter was reduced by increasing the N 2 gas. Tapering of nanowires is attributed to volume reduction of Au catalyst which diffuses onto the side wall of nanowires. However, it is found that the N2 gas has a similar effect of O2 gas which can reduce diffusion of Au catalyst so that volume reduction of Au catalyst is not so significant and nanowire growth becomes untapered. By adopting reflow of photoresist techniques, the size of metal catalyst for SiNWs growth can be significantly reduced, and the growth location of SiNWs can be defined. Well aligned Si nanowires can be obtained. However, aspect ratio of the nano size hole in the photoresist after reflow has a significant effect on the amount of the Au in the nanoparticles and thus the quality and growth of the nanowires.

原文English
主出版物標題2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
頁面62-65
頁數4
DOIs
出版狀態Published - 2007 十二月 1
事件2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
持續時間: 2007 八月 22007 八月 5

出版系列

名字2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
國家China
城市Hong Kong
期間07-08-0207-08-05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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