TY - GEN
T1 - Synthesis of well aligned silicon nanowire arrays by reflow of photoresist techniques
AU - Liu, Chien Wei
AU - Kuo, Cheng Yung
AU - Wang, Chuan Po
AU - Gau, Chie
AU - Shiau, Shiuan Hua
AU - Dai, Bau Tong
PY - 2007
Y1 - 2007
N2 - Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H2, the current work uses N2 as carrier gas. The growth conditions of SiNWs are controlled by the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620°C and P=333 m torr, and the tapering parameter was reduced by increasing the N 2 gas. Tapering of nanowires is attributed to volume reduction of Au catalyst which diffuses onto the side wall of nanowires. However, it is found that the N2 gas has a similar effect of O2 gas which can reduce diffusion of Au catalyst so that volume reduction of Au catalyst is not so significant and nanowire growth becomes untapered. By adopting reflow of photoresist techniques, the size of metal catalyst for SiNWs growth can be significantly reduced, and the growth location of SiNWs can be defined. Well aligned Si nanowires can be obtained. However, aspect ratio of the nano size hole in the photoresist after reflow has a significant effect on the amount of the Au in the nanoparticles and thus the quality and growth of the nanowires.
AB - Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H2, the current work uses N2 as carrier gas. The growth conditions of SiNWs are controlled by the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620°C and P=333 m torr, and the tapering parameter was reduced by increasing the N 2 gas. Tapering of nanowires is attributed to volume reduction of Au catalyst which diffuses onto the side wall of nanowires. However, it is found that the N2 gas has a similar effect of O2 gas which can reduce diffusion of Au catalyst so that volume reduction of Au catalyst is not so significant and nanowire growth becomes untapered. By adopting reflow of photoresist techniques, the size of metal catalyst for SiNWs growth can be significantly reduced, and the growth location of SiNWs can be defined. Well aligned Si nanowires can be obtained. However, aspect ratio of the nano size hole in the photoresist after reflow has a significant effect on the amount of the Au in the nanoparticles and thus the quality and growth of the nanowires.
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U2 - 10.1109/NANO.2007.4601141
DO - 10.1109/NANO.2007.4601141
M3 - Conference contribution
AN - SCOPUS:52949105790
SN - 1424406080
SN - 9781424406081
T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
SP - 62
EP - 65
BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
T2 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Y2 - 2 August 2007 through 5 August 2007
ER -