TY - GEN
T1 - Synthetic properties of the c-axis tilted AlN thin films
AU - Chung, Chung Jen
AU - Wei, Ching Liang
AU - Hsieh, Po Tsung
AU - Huang, Chao Yu
AU - Lin, Jen Fin
AU - Chen, Ying Chung
AU - Cheng, Chien Chuan
PY - 2010
Y1 - 2010
N2 - Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.
AB - Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.
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U2 - 10.4028/www.scientific.net/MSF.654-656.1780
DO - 10.4028/www.scientific.net/MSF.654-656.1780
M3 - Conference contribution
AN - SCOPUS:77955478162
SN - 0878492550
SN - 9780878492558
T3 - Materials Science Forum
SP - 1780
EP - 1783
BT - PRICM7
PB - Trans Tech Publications Ltd
T2 - 7th Pacific Rim International Conference on Advanced Materials and Processing, PRICM-7
Y2 - 2 August 2010 through 6 August 2010
ER -