Systematic studies of the nucleation and growth of ultrananocrystalline diamond films on silicon substrates coated with a tungsten layer

Yueh Chieh Chu, Chia Hao Tu, Gerald Jiang, Chi Chang, Chuan Pu Liu, Jyh Ming Ting, Hsin Li Lee, Yonhua Tzeng, Orlando Auciello

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

We report on effects of a tungsten layer deposited on silicon surface on the effectiveness for diamond nanoparticles to be seeded for the deposition of ultrananocrystalline diamond (UNCD). Rough tungsten surface and electrostatic forces between nanodiamond seeds and the tungsten surface layer help to improve the adhesion of nanodiamond seeds on the tungsten surface. The seeding density on tungsten coated silicon thus increases. Tungsten carbide is formed by reactions of the tungsten layer with carbon containing plasma species. It provides favorable (001) crystal planes for the nucleation of (111) crystal planes by Microwave Plasma Enhanced Chemical Vapor Deposition (MPECVD) in argon diluted methane plasma and further improves the density of diamond seeds/nuclei. UNCD films grown at different gas pressures on tungsten coated silicon which is pre-seeded by nanodiamond along with heteroepitaxially nucleated diamond nuclei were characterized by Raman scattering, field emission-scanning electron microscopy, and high resolution-transmission electron microscopy.

原文English
文章編號124328
期刊Journal of Applied Physics
111
發行號12
DOIs
出版狀態Published - 2012 六月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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