Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

H. H. Chen, S. H. Su, S. L. Chang, B. Y. Cheng, S. W. Chen, H. Y. Chen, M. F. Lin, J. C.A. Huang

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ∼500K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.

原文English
文章編號11623
期刊Scientific reports
5
DOIs
出版狀態Published - 2015 六月 23

All Science Journal Classification (ASJC) codes

  • General

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