Tailoring the charge carrier in few layers MoS 2 field-effect transistors by Au metal adsorbate

Arun Kumar Singh, Rajiv K. Pandey, Rajiv Prakash, Jonghwa Eom

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

It is an essential to tune the charge carrier concentrations in semiconductor in order to approach high-performance of the electronic and optoelectronic devices. Here, we report the effect of thin layer of gold (Au) metal on few layer (FL) molybdenum disulfide (MoS 2 ) by atomic force microscopy (AFM), Raman spectroscopy and electrical charge transport measurements. The Raman spectra and charge transport measurements show that Au thin layer affect the electronic properties of the FL MoS 2 . After deposition of Au thin layer, the threshold voltages of FL MoS 2 field-effect transistors (FETs) shift towards positive gate voltages, this reveal the p-doping in FL MoS 2 nanosheets. The shift of peak frequencies of the Raman bands are also analyzed after the deposition of Au metal films of different thickness on FL MoS 2 nanosheets. The surface morphology of Au metal on FL MoS 2 is characterized by AFM and shows the smoother and denser film in comparison to Au metal on SiO 2 .

原文English
頁(從 - 到)70-74
頁數5
期刊Applied Surface Science
437
DOIs
出版狀態Published - 2018 四月 15

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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