TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Shu Wei Chang, Jia Hon Chou, Wen Hsi Lee, Yao Jen Lee, Darsen D. Lu

研究成果: Article同行評審

摘要

Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.

原文English
文章編號108585
期刊Solid-State Electronics
201
DOIs
出版狀態Published - 2023 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 材料化學
  • 電氣與電子工程

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