TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Shu Wei Chang; Jia Hon Chou; Wen Hsi Lee; Yao Jen Lee; Darsen D. Lu

doi:10.1016/j.sse.2022.108585

TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

Shu Wei Chang
, Jia Hon Chou
, Wen Hsi Lee
, Yao Jen Lee
, Darsen D. Lu

微電子工程研究所

研究成果: Article › 同行評審

摘要

Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and f_T and f_Max improvements by 3.74 times and 8.44 times, respectively.

原文	English
文章編號	108585
期刊	Solid-State Electronics
卷	201
DOIs	https://doi.org/10.1016/j.sse.2022.108585
出版狀態	Published - 2023 3月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/j.sse.2022.108585

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title = "TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET",

abstract = "Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.",

author = "Chang, \{Shu Wei\} and Chou, \{Jia Hon\} and Lee, \{Wen Hsi\} and Lee, \{Yao Jen\} and Lu, \{Darsen D.\}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2023",

month = mar,

doi = "10.1016/j.sse.2022.108585",

language = "English",

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T1 - TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

AU - Chang, Shu Wei

AU - Chou, Jia Hon

AU - Lee, Wen Hsi

AU - Lee, Yao Jen

AU - Lu, Darsen D.

PY - 2023/3

Y1 - 2023/3

N2 - Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.

AB - Radio frequency devices based on the state-of-the-art gate-all-around (GAA) nanosheet CFET process suffer from extra parasitic capacitance due to the stacked architecture compared to planar or FinFET devices. In this study, we first calibrate the TCAD process simulation model to experimental data. Subsequently, the model is applied to the simulation of RF characteristics of CFET devices with similar design as our real devices. Subsequently, the influence of various design parameters of the CFET structure are investigated, with emphasis on high frequency characteristics. The optimal design for CFET-based RF device is determined, which resulted in and fT and fMax improvements by 3.74 times and 8.44 times, respectively.

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DO - 10.1016/j.sse.2022.108585

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AN - SCOPUS:85147091150

SN - 0038-1101

VL - 201

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108585

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TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET

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