InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.
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