Technology Development: for InSb Infrared Imagers

Ching Yeu Wei; E. A. Taft; Martin D. Gibbons; Kang L. Wang; John M. Swab; William E. Davern; Dale M. Brown

doi:10.1109/T-ED.1980.19836

Technology Development: for InSb Infrared Imagers

Ching Yeu Wei, E. A. Taft, Martin D. Gibbons, Kang L. Wang, John M. Swab, William E. Davern, Dale M. Brown

電機資訊學院

研究成果: Article › 同行評審

44 引文斯高帕斯（Scopus）

摘要

InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

原文	English
頁（從 - 到）	170-175
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	27
發行號	1
DOIs	https://doi.org/10.1109/T-ED.1980.19836
出版狀態	Published - 1980 1月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/T-ED.1980.19836

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abstract = "InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.",

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AU - Gibbons, Martin D.

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AU - Swab, John M.

AU - Davern, William E.

AU - Brown, Dale M.

PY - 1980/1

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N2 - InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

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Technology Development: for InSb Infrared Imagers

摘要

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