Technology Development: for InSb Infrared Imagers

Ching Yeu Wei, E. A. Taft, Martin D. Gibbons, Kang L. Wang, John M. Swab, William E. Davern, Dale M. Brown

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)

摘要

InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010 cm-2 · eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity (R). The average D* of a 64-element line array was measured to be 3.4 × 1011 cm · Hz1/2 · W-1 which is 70 percent of that of “background-limited-performance” (BLIP) operation. The R was 1 × 10-5 V/photon with 10-percent uniformity. The D* and R were also obtained for a 32 × 32 2D array.

原文English
頁(從 - 到)170-175
頁數6
期刊IEEE Transactions on Electron Devices
27
發行號1
DOIs
出版狀態Published - 1980 一月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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