TEM measurement of strain in coherent quantum heterostructures

Peter D. Miller, Chuan Pu Liu, J. Murray Gibson

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (001). We found that the method of specimen preparation can significantly affect the observed strain in these islands.

原文English
頁(從 - 到)225-233
頁數9
期刊Ultramicroscopy
84
發行號3-4
DOIs
出版狀態Published - 2000 八月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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