Temperature-based phase change memory model for pulsing scheme assessment

Yi Bo Liao, Jun Tin Lin, Meng Hsueh Chiang

研究成果: Conference contribution

25 引文 斯高帕斯(Scopus)

摘要

A physical yet analytical phase change memory (PCM) model simultaneously accounting for thermal and electrical conductivities is presented. Due to the physics based nature of the model, the essential temperature from heating and cooling of PCM during operation is instantaneously updated. More importantly, the model can be applied to non-conventional circuit design technique. We show that for the first time the input current pulsing scheme for PCM programming can be significantly simplified via the unique intrinsic thermal memory effect. The model is implemented In HSPICE using Verilog-A, which is flexible and portable for different circuit simulators. As PCM technology is emerging, the predictive compact model can expedite the novel technology development.

原文English
主出版物標題Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
頁面199-202
頁數4
DOIs
出版狀態Published - 2008
事件IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
持續時間: 2008 六月 22008 六月 4

出版系列

名字Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Other

OtherIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
國家/地區France
城市Minatec Grenoble
期間08-06-0208-06-04

All Science Journal Classification (ASJC) codes

  • 人機介面
  • 電氣與電子工程

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