Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor

K. W. Chang, Jih-Jen Wu

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Catalytic growth of 1-D GaN nanostructures is achieved at temperatures from 550 to 850 °C using NH3 and gallium acetylacetonate. Structural characterization of the 1-D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 °C, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1-D GaN nanostructures via the VLS mechanism. Possible mechanisms for forming nanoneedles at low temperatures are proposed.

原文English
頁(從 - 到)769-774
頁數6
期刊Applied Physics A: Materials Science and Processing
77
發行號6
DOIs
出版狀態Published - 2003 十一月 1

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)

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