Catalytic growth of 1-D GaN nanostructures is achieved at temperatures from 550 to 850 °C using NH3 and gallium acetylacetonate. Structural characterization of the 1-D GaN nanostructures by HRTEM shows that straight GaN nanowires, needle-like nanowires (nanoneedles), and bamboo-shoot-like nanoneedles are synthesized at 750, 650, and 550 °C, respectively. In addition to selecting a proper catalyst, providing sufficient precursors has been demonstrated to be a crucial factor for the low-temperature growth of 1-D GaN nanostructures via the VLS mechanism. Possible mechanisms for forming nanoneedles at low temperatures are proposed.
|頁（從 - 到）||769-774|
|期刊||Applied Physics A: Materials Science and Processing|
|出版狀態||Published - 2003 十一月 1|
All Science Journal Classification (ASJC) codes
- 化學 (全部)