A newly designed inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been successfully fabricated and studied. For a 1 × 100 μm 2 device, a high gate-to-drain breakdown voltage over 30 V at 300 K is found. In addition, a maximum transconductance of 201 mS/mm with a broad operation regime for 3 V of gate bias (565 mA/mm of drain current density), a very high output drain saturation current density of 826 mA/mm, and a high DC gain ratio of 575 are obtained. Furthermore, good temperature-dependent performances at the operating temperature ranging from 300 to 450 K are found. The unity current gain cutoff frequency f T and maximum oscillation frequency f max up to 16 and 34 GHz are obtained, respectively. Meanwhile, the studied device shows the significantly wide and flat gate bias operation regime (3 V) for microwave performances.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering