Temperature dependence of electrical characteristics of strained nMOSFETs using stress memorization technique

Po Chin Huang, San Lein Wu, Shoou Jinn Chang, Cheng Wen Kuo, Ching Yao Chang, Yao Tsung Huang, Yao Chin Cheng, Osbert Cheng

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current of SMT devices indicate higher tensile stress in the channel and prove the true transmission of SMT-process-induced stress from the deposited SiN layer. Moreover, as temperature is increased, SMT devices show less deteriorated mobility and increased gate tunneling current, which are due to decreased phonon scattering and increased tunneling barrier height, respectively.

原文English
文章編號5770179
頁(從 - 到)835-837
頁數3
期刊IEEE Electron Device Letters
32
發行號7
DOIs
出版狀態Published - 2011 七月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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