@article{aaf31c6ad1b145aeb574ab635917ecd2,
title = "Temperature dependence of electrical characteristics of strained nMOSFETs using stress memorization technique",
abstract = "The temperature dependence of the electrical characteristics of strained nMOSFETs combining stress memorization technique (SMT) process and contact etch-stop layer has been investigated. The observed higher mobility and lower gate tunneling current of SMT devices indicate higher tensile stress in the channel and prove the true transmission of SMT-process-induced stress from the deposited SiN layer. Moreover, as temperature is increased, SMT devices show less deteriorated mobility and increased gate tunneling current, which are due to decreased phonon scattering and increased tunneling barrier height, respectively.",
author = "Huang, {Po Chin} and Wu, {San Lein} and Chang, {Shoou Jinn} and Kuo, {Cheng Wen} and Chang, {Ching Yao} and Huang, {Yao Tsung} and Cheng, {Yao Chin} and Osbert Cheng",
note = "Funding Information: Manuscript received June 22, 2010; revised March 26, 2011; accepted March 28, 2011. Date of publication May 19, 2011; date of current version June 29, 2011. This work was supported in part by the National Science Council (NSC) of Taiwan under Contract NSC 99-2221-E-230-019, by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU), and by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education. The review of this letter was arranged by Editor C. Bulucea.",
year = "2011",
month = jul,
doi = "10.1109/LED.2011.2140350",
language = "English",
volume = "32",
pages = "835--837",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}