The temperature dependence of gate current and breakdown behavior in an n+-GaAs/p+-InGaP/n--GaAs high-barrier gate field-effect transistor has been studied and demonstrated. Due to the presence of an n+-GaAs/p+-InGaP/n--GaAs high-barrier gate structure, the device shows high-breakdown characteristics. In addition, we found that the off-state breakdown voltage BVDS is dominated by channel and gate breakdowns at T = 300 to 420 K, and gate current IG comes mainly from the tunneling mechanism within this temperature range. However, as the temperature is increased above 420 K, the IG is seriously affected by the substrate leakage current and BVDS is only dominated by gate breakdown.
|頁（從 - 到）||24-27|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 2001 一月|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)