TY - JOUR
T1 - Temperature dependences of an In0.46Ga0.54As/In 0.42Al0.58As based metamorphic high electron mobility transistor (MHEMT)
AU - Chen, Chun Wei
AU - Lai, Po Hsien
AU - Lour, Wen Shiung
AU - Guo, Der Feng
AU - Tsai, Jung Hui
AU - Liu, Wen Chau
PY - 2006/9/1
Y1 - 2006/9/1
N2 - In this paper, an interesting thermally stable In0.42Al 0.58As/In0.46Ga0.54As metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. Good dc and RF characteristics are obtained by precisely depositing gold (Au) upon the In0.42Al0.58As barrier layer as the Schottky contact metal. For a MHEMT with gate dimensions of 1 × 100 νm2, high gate-drain breakdown voltage, high turn-on voltage, low gate leakage current density, high maximum transconductance with broad operating regime and low output conductance are obtained even at ambient temperatures up to 510 K (240 °C). The studied device also shows a very good microwave performance at room temperature. Moreover, the relatively low variations of the device performance are achieved over a wide temperature range (from 300 to 510 K). Therefore, the studied device has a good thermally stable performance that is suitable for high-speed and high-power electronic applications.
AB - In this paper, an interesting thermally stable In0.42Al 0.58As/In0.46Ga0.54As metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. Good dc and RF characteristics are obtained by precisely depositing gold (Au) upon the In0.42Al0.58As barrier layer as the Schottky contact metal. For a MHEMT with gate dimensions of 1 × 100 νm2, high gate-drain breakdown voltage, high turn-on voltage, low gate leakage current density, high maximum transconductance with broad operating regime and low output conductance are obtained even at ambient temperatures up to 510 K (240 °C). The studied device also shows a very good microwave performance at room temperature. Moreover, the relatively low variations of the device performance are achieved over a wide temperature range (from 300 to 510 K). Therefore, the studied device has a good thermally stable performance that is suitable for high-speed and high-power electronic applications.
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U2 - 10.1088/0268-1242/21/9/024
DO - 10.1088/0268-1242/21/9/024
M3 - Article
AN - SCOPUS:33747303176
SN - 0268-1242
VL - 21
SP - 1358
EP - 1363
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 9
M1 - 024
ER -