Temperature-dependent character istics of a novel InP/InGaAlAs heterojunction bipolar transistor

W. C. Liu, H. J. Pan, W. C. Wang, C. C. Cheng, S. C. Feng, C. H. Yen, K. W. Lin

研究成果: Conference contribution

摘要

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the DC performance of conventional InGaAsbased single HBT's, the quaternary In0.53Ga0.34Al0.13As with a wider band gap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and a low output conductance even at high temperature operations. Furthermore, the temperature dependence of current gain and breakdown voltage is studied and demonstrated.

原文English
主出版物標題ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
編輯H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
發行者IEEE Computer Society
頁面240-243
頁數4
ISBN(電子)2863322486
ISBN(列印)9782863322482
DOIs
出版狀態Published - 2000
事件30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
持續時間: 2000 九月 112000 九月 13

出版系列

名字European Solid-State Device Research Conference
ISSN(列印)1930-8876

Other

Other30th European Solid-State Device Research Conference, ESSDERC 2000
國家/地區Ireland
城市Cork
期間00-09-1100-09-13

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 安全、風險、可靠性和品質

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