Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge, Si and GaAs

Y. K. Su, C. Y. Chang, T. S. Wu, B. D. Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kaneda et al.

原文English
頁(從 - 到)377-384
頁數8
期刊Optical and Quantum Electronics
11
發行號5
DOIs
出版狀態Published - 1979 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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