Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor

Tzu Pin Chen, Ssu I. Fu, Jung Hui Tsai, Wen Shiung Lour, Der Feng Guo, Shiou Ying Cheng, Wen-Chau Liu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300-400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

原文English
文章編號040
頁(從 - 到)1733-1737
頁數5
期刊Semiconductor Science and Technology
21
發行號12
DOIs
出版狀態Published - 2006 十二月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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