Temperature-dependent characteristics of diffused and polysilicon resistors for ULSI applications

Chii Maw Uang, Hung Ming Chuang, Sheng Fu Tsai, Kong Beng Thei, Po Hsien Lai, Ssu I. Fu, Wen Chau Liu

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18μm CMOS technology, cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

原文English
主出版物標題Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
編輯X.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
發行者Institute of Electrical and Electronics Engineers Inc.
頁面293-296
頁數4
4
ISBN(列印)7309039157
出版狀態Published - 2004
事件Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
持續時間: 2004 3月 152004 3月 16

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
國家/地區China
城市Shanghai
期間04-03-1504-03-16

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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