Temperature-dependent characteristics of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistor

Hsi Jen Pan, Chih Hung Yen, Kuo Hui Yu, Kun Wei Lin, Kuan Po Lin, Wen Huei Chiou, Hung Ming Chuang, Wen Chau Liu

研究成果: Conference contribution

摘要

Temperature-dependent dc performances of InP/InGaAlAs heterojunction bipolar transistors (HBT's) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBT's, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temperature from 25 toward-1960, an irregular temperature behavior of current gain has been investigated.

原文English
主出版物標題COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
編輯Leonard D. Broekman, Brian F. Usher, John D. Riley
發行者Institute of Electrical and Electronics Engineers Inc.
頁面238-241
頁數4
ISBN(電子)0780366980
DOIs
出版狀態Published - 2000
事件Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
持續時間: 2000 十二月 62000 十二月 8

出版系列

名字Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
2000-January

Other

OtherConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
國家/地區Australia
城市Bundoora
期間00-12-0600-12-08

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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