Temperature-dependent characteristics of MBE-grown GaAs p+-v-p+-v-n+ regenerative switching device

C. Y. Chang, Y. H. Wang, W. C. Liu, S. A. Liao

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The thick GaAs p+-v-p+-v-n+ regenerative switching diode was fabricated by the MBE technique on n+-GaAs substrate. Temperature-dependent operational parameters, including switching voltage Vs, switching current Is, holding voltage VH and holding current I, were investigated. It is found that Vs, VH and IH decrease from 19 V, 3.6 V and 1.2 mA to 10.2 V, 2 V and 130 μA, respectively, with decreasing measurement temperature from room temperature to 77 K, while Is increases from 5 μA to 45 μA. However, Vs takes a more complicated ‘M’-shape characteristic from 77 K to 323 K. which indicates a more complicated transport mechanism.

原文English
頁(從 - 到)24-25
頁數2
期刊Electronics Letters
21
發行號1
DOIs
出版狀態Published - 1985 1月 3

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

指紋

深入研究「Temperature-dependent characteristics of MBE-grown GaAs p+-v-p+-v-n+ regenerative switching device」主題。共同形成了獨特的指紋。

引用此