Temperature-dependent characteristics of polysilicon and diffused resistors

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Wen-Chau Liu

研究成果: Article同行評審

43 引文 斯高帕斯(Scopus)

摘要

The temperature-dependent characteristics of polysilicon and diffused resistors have been studied. By using the 0.18-μm CMOS technology, a cobalt salicide process is employed and silicide is formed at the ends of resistors. Based on a simple and useful model, some important parameters of resistors including bulk sheet resistance (Rbulk) and interface resistance (Rinterface) are obtained at different temperature. For diffused resistors, the Rbulk and Rinterface values are increased and decreased with the increase of temperature, respectively. Positive values of temperature coefficient of resistance (TCR) are observed. Furthermore, TCR values are decreased with the decrease of resistor size. For polysilicon resistors, the Rinterface values are decreased with the increase of temperature. In addition, negative and positive TCR values of Rbulk are found in n+ and p+ polysilicon resistors, respectively. In conclusion, by comparing the studied diffused and polysilicon resistors, the negative trends of TCR are observed when the resistor sizes are decreased.

原文English
頁(從 - 到)1413-1415
頁數3
期刊IEEE Transactions on Electron Devices
50
發行號5
DOIs
出版狀態Published - 2003 五月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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