Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

研究成果: Conference contribution

摘要

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

原文English
主出版物標題2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面575-577
頁數3
ISBN(電子)9781479944033
DOIs
出版狀態Published - 2015 八月 14
事件11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
持續時間: 2015 六月 92015 六月 12

出版系列

名字Proceedings of the International Conference on Power Electronics and Drive Systems
2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
國家/地區Australia
城市Sydney
期間15-06-0915-06-12

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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