@inproceedings{18a2687d0db74bc3bec32c50a8a15873,
title = "Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3",
abstract = "This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.",
author = "Liu, {Han Yin} and Wei-Chou Hsu and Chou, {Bo Yi} and Lee, {Ching Sung} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min}",
year = "2015",
month = aug,
day = "14",
doi = "10.1109/PEDS.2015.7203396",
language = "English",
series = "Proceedings of the International Conference on Power Electronics and Drive Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "575--577",
booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",
address = "United States",
note = "11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",
}