Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

Han Yin Liu, Wei-Chou Hsu, Bo Yi Chou, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

研究成果: Conference contribution

摘要

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

原文English
主出版物標題2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面575-577
頁數3
ISBN(電子)9781479944033
DOIs
出版狀態Published - 2015 八月 14
事件11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
持續時間: 2015 六月 92015 六月 12

出版系列

名字Proceedings of the International Conference on Power Electronics and Drive Systems
2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
國家Australia
城市Sydney
期間15-06-0915-06-12

指紋

Spray pyrolysis
High electron mobility transistors
Ultrasonics
Metals
Temperature
Gates (transistor)
Electron mobility
Passivation
Oxide semiconductors
Thermodynamic stability
Electronic equipment

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Liu, H. Y., Hsu, W-C., Chou, B. Y., Lee, C. S., Sun, W. C., Wei, S. Y., & Yu, S. M. (2015). Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (頁 575-577). [7203396] (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203396
Liu, Han Yin ; Hsu, Wei-Chou ; Chou, Bo Yi ; Lee, Ching Sung ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min. / Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 575-577 (Proceedings of the International Conference on Power Electronics and Drive Systems).
@inproceedings{18a2687d0db74bc3bec32c50a8a15873,
title = "Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3",
abstract = "This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.",
author = "Liu, {Han Yin} and Wei-Chou Hsu and Chou, {Bo Yi} and Lee, {Ching Sung} and Sun, {Wen Ching} and Wei, {Sung Yen} and Yu, {Sheng Min}",
year = "2015",
month = "8",
day = "14",
doi = "10.1109/PEDS.2015.7203396",
language = "English",
series = "Proceedings of the International Conference on Power Electronics and Drive Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "575--577",
booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",
address = "United States",

}

Liu, HY, Hsu, W-C, Chou, BY, Lee, CS, Sun, WC, Wei, SY & Yu, SM 2015, Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203396, Proceedings of the International Conference on Power Electronics and Drive Systems, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 575-577, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203396

Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3. / Liu, Han Yin; Hsu, Wei-Chou; Chou, Bo Yi; Lee, Ching Sung; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min.

2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 575-577 7203396 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

TY - GEN

T1 - Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

AU - Liu, Han Yin

AU - Hsu, Wei-Chou

AU - Chou, Bo Yi

AU - Lee, Ching Sung

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

PY - 2015/8/14

Y1 - 2015/8/14

N2 - This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

AB - This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al2O3. The temperature-dependent electrical characteristics like IGD-VGD, IDS-VDS, and IDS-VGS are measured from 300 K to 480 K. The MOS-HEMT shows lower IGD and higher IDS and higher gm, max. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al2O3/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al2O3 passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.

UR - http://www.scopus.com/inward/record.url?scp=84952008655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84952008655&partnerID=8YFLogxK

U2 - 10.1109/PEDS.2015.7203396

DO - 10.1109/PEDS.2015.7203396

M3 - Conference contribution

AN - SCOPUS:84952008655

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 575

EP - 577

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Liu HY, Hsu W-C, Chou BY, Lee CS, Sun WC, Wei SY 等. Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 575-577. 7203396. (Proceedings of the International Conference on Power Electronics and Drive Systems). https://doi.org/10.1109/PEDS.2015.7203396