Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic HEMT

Wen Chau Liu, Wen Lung Chang, Wen Shiung Lour, Shiou Ying Cheng, Yung Hsin Shie, Jing Yuh Chen, Wei Chou Wang, Hsi Jen Pan

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

We reported a newly designed double delta-doped GaInP/InGaAs pseudomorphic HEMT with high temperature-dependent performances. In addition to the novel aspects of the proposed HEMT structure, temperature-dependent behaviors including a high-voltage (40 V) and a low-leakage current (17 nA/mm) are further improved by eliminating mesa-sidewall effect. We obtained nearly current-independent transconductance in the temperature of 300-450 K. The measured current gain cutoff frequency fT and maximum oscillation frequency fmax for a 1-μm gate device are 12 and 28.4 GHz, respectively.

原文English
頁(從 - 到)274-276
頁數3
期刊IEEE Electron Device Letters
20
發行號6
DOIs
出版狀態Published - 1999 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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