Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor

Wen Chau Liu, Hsi Jen Pan, Wei Chou Wang, Kong Beng Thei, Kwun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

In this work, we report the temperature-dependent characteristics of a new InP/InGaAlAs heterojunction bipolar transistor (HBT). In order to improve the dc performance of conventional InGaAs-based single HBTs, the quaternary In0.53 Ga0.34Al0.13 As with a wider bandgap is employed as the material for both the base and collector layers. Experimentally, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. Based on the breakdown mechanism of avalanche multiplication, the negative temperature dependence of breakdown voltage is attributed to the positive temperature-dependent impact ionization coefficient. Furthermore, the temperature dependence of current gain is investigated and reported. It is believed that the suppression of hole injection current with decreasing temperature is responsible for the opposite variation of current gains at high current levels.

原文English
頁(從 - 到)524-527
頁數4
期刊IEEE Electron Device Letters
21
發行號11
DOIs
出版狀態Published - 2000 十一月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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