Temperature effect of a heterojunction bipolar transistor (HBT) with an emitter-edge-thinning structure

T. P. Chen, K. Y. Chu, L. Y. Chen, T. H. Tsai, C. W. Hung, W. C. Liu

研究成果: Conference contribution

摘要

The temperature-dependent DC characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter-edge-thinning structure are demonstrated. Experimentally, due to the emitter-edge-thinning structure, higher current gains and wider collector current operation regime over the measured temperature range (300 - 400 K) are observed as compared to the conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on DC current gains, lower base surface recombination current densities, and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面717-720
頁數4
DOIs
出版狀態Published - 2007 十二月 1
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 2007 十二月 202007 十二月 22

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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