Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD

Chien Hung Wu, Bo Wen Huang, Kow Ming Chang, Shui-Jinn Wang

研究成果: Conference contribution

原文English
主出版物標題The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research
出版地 Istanbul, Turkey
出版狀態Published - 2015 十月 20

引用此

Wu, C. H., Huang, B. W., Chang, K. M., & Wang, S-J. (2015). Temperature Effect of Double Gate-Stacked Layer ZrO2/LaAlO3 IGZO Thin-Film Transistors Prepared by AP-PECVD. 於 The 2nd International Conference on Innovation Trends in Multidisciplinary Academic Research