Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

Jau Yi Wu, Po Wen Sze, Yeong Her Wang, Mau Phon Houng

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

The gate dielectrics of Ga2O3(As2O3) of the GaAs MOSFET were prepared by a low-cost and low-temperature liquid-phase chemically enhanced oxidation method. The temperature and oxide thickness dependence of gate dielectric films on GaAs MOSFET have been investigated. The leakage current and dielectric breakdown field were both studied. Both gate leakage current density and breakdown electrical field were found to depend on the oxide thickness and operating temperature. The increasing trend in gate leakage current and the decreasing trend in breakdown electrical field were observed upon reducing oxide thickness from 30 to 12 nm and increasing operating temperature from -50°C to 200°C.

原文English
頁(從 - 到)1999-2003
頁數5
期刊Solid-State Electronics
45
發行號12
DOIs
出版狀態Published - 2001 十二月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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