Temperature effect on the formation of uniform self-assembled Ge dots

G. Jin, J. L. Liu, K. L. Wang

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

The effect of growth temperature on the formation of uniform self-assembled Ge dots on Si substrates was discussed. It was found that highly uniform Ge dots with height deviation of ±3% were obtained at 600°C. The analysis showed that the discontinuity in characteristic length was in an Arrhenius plot between 600 and 625°C.

原文English
頁(從 - 到)2847-2849
頁數3
期刊Applied Physics Letters
83
發行號14
DOIs
出版狀態Published - 2003 十月 6

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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