Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches

Changwei Chen, Yon-Hua Tzeng

研究成果: Conference contribution

摘要

Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation with switch performance. The DC resistivity of nanodiamond was found to be lower than that of Si 3N4 by 3 to 6 orders of magnitude. The discharge time constant of nanodiamond was, therefore, much smaller than that for Si 3N4. Extended DC bias was applied to enhance dielectric charging and demonstrate the superior performance of nanodiamond to that of Si3N4 by showing the much better persistence of capacitance-voltage characteristics of nanodiamond after being subjected to extended DC bias. Superior nanodiamond characteristics were further demonstrated at an elevated temperature at (150°C) and at the dry ice temperature (-79°C).

原文English
主出版物標題2010 10th IEEE Conference on Nanotechnology, NANO 2010
頁面619-622
頁數4
DOIs
出版狀態Published - 2010 十二月 1
事件2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
持續時間: 2010 八月 172010 八月 20

出版系列

名字2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
國家Korea, Republic of
城市Ilsan, Gyeonggi-Do
期間10-08-1710-08-20

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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  • 引用此

    Chen, C., & Tzeng, Y-H. (2010). Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches. 於 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (頁 619-622). [5697798] (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697798