TY - GEN
T1 - Temperature effects on nanodiamond dielectric charging for RF MEMS capacitive switches
AU - Chen, Changwei
AU - Tzeng, Yon-Hua
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation with switch performance. The DC resistivity of nanodiamond was found to be lower than that of Si 3N4 by 3 to 6 orders of magnitude. The discharge time constant of nanodiamond was, therefore, much smaller than that for Si 3N4. Extended DC bias was applied to enhance dielectric charging and demonstrate the superior performance of nanodiamond to that of Si3N4 by showing the much better persistence of capacitance-voltage characteristics of nanodiamond after being subjected to extended DC bias. Superior nanodiamond characteristics were further demonstrated at an elevated temperature at (150°C) and at the dry ice temperature (-79°C).
AB - Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation with switch performance. The DC resistivity of nanodiamond was found to be lower than that of Si 3N4 by 3 to 6 orders of magnitude. The discharge time constant of nanodiamond was, therefore, much smaller than that for Si 3N4. Extended DC bias was applied to enhance dielectric charging and demonstrate the superior performance of nanodiamond to that of Si3N4 by showing the much better persistence of capacitance-voltage characteristics of nanodiamond after being subjected to extended DC bias. Superior nanodiamond characteristics were further demonstrated at an elevated temperature at (150°C) and at the dry ice temperature (-79°C).
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U2 - 10.1109/NANO.2010.5697798
DO - 10.1109/NANO.2010.5697798
M3 - Conference contribution
AN - SCOPUS:79951848545
SN - 9781424470334
T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
SP - 619
EP - 622
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
Y2 - 17 August 2010 through 20 August 2010
ER -