Terahertz emission of SiGe/Si quantum wells

M. S. Kagan, I. V. Altukhov, V. P. Sinis, S. G. Thomas, K. L. Wang, K. A. Chao, I. N. Yassievich

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

THz emission of stimulated character was observed in Si/SiGe/Si quantum well (QW) structures doped with boron. The resonance cavity formed by extremely parallel-structure planes due to total internal reflection, is necessary for the emission. The mechanism for the possible population inversion of strain-split acceptor levels is proposed.

原文English
頁(從 - 到)237-239
頁數3
期刊Thin Solid Films
380
發行號1-2
DOIs
出版狀態Published - 2000 十二月 22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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